Fundamental aspects of organometallic vapor phase epitaxySTRINGFELLOW, G. B.Materials science & engineering. B, Solid-state materials for advanced technology. 2001, Vol 87, Num 2, pp 97-116, issn 0921-5107Article

Ordered structures and metastable alloys grown by OMVPESTRINGFELLOW, G. B.Journal of crystal growth. 1989, Vol 98, Num 1-2, pp 108-117, issn 0022-0248Conference Paper

Non-hydride group V sources for OMVPESTRINGFELLOW, G. B.Journal of electronic materials. 1988, Vol 17, Num 4, pp 327-335, issn 0361-5235Article

Reaction mechanisms in OMVPE growth of GaAs determined using D₂ labelling experimentsSTRINGFELLOW, G. B.Progress in crystal growth and characterization. 1989, Vol 19, Num 1-2, pp 115-123, issn 0146-3535Article

Fourth workshop on organometallic vapor phase epitaxy, Monterey CA, October 8 to 11, 1989STRINGFELLOW, G. B.Journal of electronic materials. 1990, Vol 19, Num 4, issn 0361-5235, 110 p.Conference Proceedings

Miscibility gaps and spinodal decomposition in III/V quaternary alloys of the type A_xB_yC_1-x-yDSTRINGFELLOW, G. B.Journal of applied physics. 1983, Vol 54, Num 1, pp 404-409, issn 0021-8979Article

Annealed AuGe based ohmic contacts on InP with ion milling prior to metallizationDUNN, J; STRINGFELLOW, G. B.Journal of electronic materials. 1990, Vol 19, Num 2, pp L1-L3, issn 0361-5235Article

Numerical simulations of transport processes during Czochralski growth of semiconductor compounds : American crystal growth 1996XIAO, Q.Journal of crystal growth. 1997, Vol 174, Num 1-4, pp 7-12, issn 0022-0248Conference Paper

Ag/Al Schottky contacts on n-InPDUNN, J; STRINGFELLOW, G. B.Journal of electronic materials. 1988, Vol 17, Num 2, pp 181-186, issn 0361-5235Article

ACCG-7: proceedings/Joint conference of 7th American Conference on Crystal Growth with 3rd international conference on II-VI compounds, Monterey CA, July 12-17, 1987STRINGFELLOW, G. B.Journal of crystal growth. 1987, Vol 85, Num 1-2, issn 0022-0248, XIII-307 pConference Proceedings

Effect of Te doping on step structure and ordering in GaInPLEE, S. H; FETZER, C; STRINGFELLOW, G. B et al.Journal of crystal growth. 1998, Vol 195, Num 1-4, pp 13-20, issn 0022-0248Conference Paper

Solubility of nitrogen in binary III-V systemsHO, I.-H; STRINGFELLOW, G. B.Journal of crystal growth. 1997, Vol 178, Num 1-2, pp 1-7, issn 0022-0248Article

Effect of P precursor on surface structure and ordering in GaInPHSU, T. C; YU HSU; STRINGFELLOW, G. B et al.Journal of crystal growth. 1998, Vol 193, Num 1-2, pp 1-8, issn 0022-0248Article

Effect of structure on the mechanical properties of Ta and Ta(N) thin films prepared by reactive DC magnetron sputtering : American crystal growth 1996SAHA, R; BARNARD, J. A.Journal of crystal growth. 1997, Vol 174, Num 1-4, pp 495-500, issn 0022-0248Conference Paper

Electrical fluctuations in HgCdTe introduced during quenching after annealing : Vapor growth and epitaxy 1996EBE, H; YAMAMOTO, K.Journal of crystal growth. 1997, Vol 174, Num 1-4, pp 746-750, issn 0022-0248Conference Paper

Interfacial structure analysis for the prediction of morphology of crystals and implications for the design of tailor-made additives : American crystal growth 1996LIU, X. Y.Journal of crystal growth. 1997, Vol 174, Num 1-4, pp 380-385, issn 0022-0248Conference Paper

Atomic ordering in III/V semiconductor alloysSTRINGFELLOW, G. B; CHEN, G. S.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1991, Vol 9, Num 4, pp 2182-2188, issn 0734-211XConference Paper

Annealing effects in the Ag/Al-(100) InP system: Al redistribution and film recrystallizationDUNN, J; JEN, H. R; STRINGFELLOW, G. B et al.Journal of electronic materials. 1989, Vol 18, Num 3, pp 445-451, issn 0361-5235, 7 p.Article

Doping superlattices in GaPKITAMURA, M; COHEN, R. M; STRINGFELLOW, G. B et al.Journal of applied physics. 1987, Vol 61, Num 4, pp 1533-1536, issn 0021-8979Article

Se-Ga_2/3Se phase equilibria: a regular associated solution model for the Ga-Se liquidMIKKELSEN, J. C. JR; STRINGFELLOW, G. B.The Journal of physics and chemistry of solids. 1983, Vol 44, Num 12, pp 1141-1145, issn 0022-3697Article

Pyrolysis of monomethylhydrazine for organometallic vapor-phase epitaxy (OMVPE) growthLEE, R. T; STRINGFELLOW, G. B.Journal of crystal growth. 1999, Vol 204, Num 3, pp 247-255, issn 0022-0248Article

Metalorganic vapour phase epitaxy 1998BIEFELD, R. M; STRINGFELLOW, G. B.Journal of crystal growth. 1998, Vol 195, Num 1-4, issn 0022-0248, 766 p.Conference Proceedings

Heteroepitaxial growth of α-Fe₂O₃, γ-Fe₂O₃ and Fe₃O₄ thin films by oxygen-plasma-assisted molecular beam epitaxy : American crystal growth 1996GAO, Y; CHAMBERS, S. A.Journal of crystal growth. 1997, Vol 174, Num 1-4, pp 446-454, issn 0022-0248Conference Paper

Model-based calibration of NASA CGF furnace : American crystal growth 1996VUJISIC, L; MOTAKEF, S.Journal of crystal growth. 1997, Vol 174, Num 1-4, pp 153-158, issn 0022-0248Conference Paper

Surface kinetics of metalorganic vapor-phase epitaxy : surface diffusion, nucleus formation, sticking at steps : Vapor growth and epitaxy 1996KASU, M; KOBAYASHI, N.Journal of crystal growth. 1997, Vol 174, Num 1-4, pp 513-521, issn 0022-0248Conference Paper